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NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary
P2703BAG
TSOP-6 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 27m ID 7A
D 6
D 5 2 D
S 4 3 G
G S
1 D
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
1
SYMBOL VGS
LIMITS 20 7 5 20 1.6 1.2 -55 to 150 275
UNITS V
TC = 25 C TC = 100 C
ID IDM
A
TC = 25 C TC = 100 C
PD Tj, Tstg TL
W
Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2 1
C
SYMBOL RJC RJA
TYPICAL
MAXIMUM 30 78
UNITS C / W
Pulse width limited by maximum junction temperature. Duty cycle 1%
ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 5A VGS = 10V, ID = 7A VDS = 5V, ID = 7A 20 32 23 14.4 40 27 30 1 1.5 3 100 nA 1 10 A A m S V LIMITS UNIT MIN TYP MAX
1
AUG-12-2005
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary
P2703BAG
TSOP-6 Lead-Free
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 2
Ciss Coss Crss Qg Qgs Qgd
2
680 VGS = 0V, VDS = 10V, f = 1MHz 140 70 10 VDS = 15V, VGS = 10V, ID = 7A 1.7 2.1 8.0 VDS = 10V, ID 1A, VGS = 10V, RGEN = 6 4.0 22.0 5.0 nS 15 nC pF
Gate-Source Charge Gate-Drain Charge Rise Time2 Turn-Off Delay Time Fall Time2
2
Turn-On Delay Time
td(on) tr
2
td(off) tf
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Forward Voltage
1 2 1
IS VSD IF = 1A, VGS = 0V
3 1.1
A V
Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "19YWW", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name
6
5
4
19YWW
1 2 3
Marking Description:
1 - N MOSFET 9 - Serial Number Y - Year W - Week
2
AUG-12-2005
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary
P2703BAG
TSOP-6 Lead-Free
TYPICAL CHARACTERISTICS
I ,DRAIN - SOURCE CURRENT( A )
0
100 I S,REVERSE DRAIN CURRENT( A )
BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE
VGS= 0V
10 TA = 125C 25C
1 0.1
0.01
-55C
0.001 0.0001 0 0.8 1.0 1.2 0.2 0.4 0.6 VSD ,BODY DIODE FORWARD VOLTAGE( V ) 1.4
3
AUG-12-2005
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary
P2703BAG
TSOP-6 Lead-Free
10 TRANSIENT THERMAL RESISTANCE r ( t ) ,NORMALIZED EFFECTIVE
1
TRANSIENT THERMAL RESPONSE CURVE
D=0.5
10
0
0.20 0.10
-1
10
0.05 0.02 0.01
P(pk)
10
-2
Single pulse
-3
t1
10
t2
1.R 2.R 3.T j
-4
10
(t)=r(t)*R = 156 C/W JC + TC = P * R JC (t) t1 4.Duty Cycle,D = t2
JC
10
-4
10
-3
10
-2
10 10 t1 , TIME( ms )
-1
0
10
1
10
2
10
3
4
AUG-12-2005
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary
P2703BAG
TSOP-6 Lead-Free
TSOP- 6 MECHANICAL DATA
mm Dimension Min. A B C D E F G 2.5 1.5 2.7 0.7 0 0.3 0.4 Typ. 0.95 2.8 1.6 2.9 3.1 1.7 3.1 1.2 0.15 0.5 Max. H I J K L M N Dimension Min. 0.08 0.3 Typ. 0.13 Max. 0.2 0.6 mm
H
C
B
A D E G
I
F
5
AUG-12-2005

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